G13P04S

Goford Semiconductor

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G13P04S

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Package:

8-SOP

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Description:

P-40V,-13A,RD(MAX)<15M@-10V,VTH-

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3271 pF @ 20 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	15mOhm @ 12A, 10V
Supplier Device Package	8-SOP
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	40 V
Series	G
Power Dissipation (Max)	3W (Tc)
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)