FQN1N60CTA

onsemi

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FQN1N60CTA

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TO-92-3

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Description:

MOSFET N-CH 600V 300MA TO92-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	170 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.2 nC @ 10 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	11.5Ohm @ 150mA, 10V
Supplier Device Package	TO-92-3
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	600 V
Series	QFET®
Power Dissipation (Max)	1W (Ta), 3W (Tc)
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	300mA (Tc)
Mfr	onsemi
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Cut Tape (CT)
Base Product Number	FQN1N60