FDS4465
detaildesc

FDS4465

Fairchild Semiconductor

Product No:

FDS4465

Package:

8-SOIC

Batch:

-

Datasheet:

pdf

Description:

POWER FIELD-EFFECT TRANSISTOR, 1

Quantity:

Delivery:

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Payment:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 8237 pF @ 10 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 8.5mOhm @ 13.5A, 4.5V
Supplier Device Package 8-SOIC
Vgs(th) (Max) @ Id 1.5V @ 250µA
Drain to Source Voltage (Vdss) 20 V
Series PowerTrench®
Power Dissipation (Max) 2.5W (Ta)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 13.5A (Ta)
Mfr Fairchild Semiconductor
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Package Bulk