DMWSH120H90SM4Q

Diodes Incorporated

Product No:

DMWSH120H90SM4Q

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Package:

TO-247-4

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Description:

SIC MOSFET BVDSS: >1000V TO247-4

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1112 pF @ 1000 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	47.6 nC @ 15 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	97.5mOhm @ 20A, 15V
Supplier Device Package	TO-247-4
Vgs(th) (Max) @ Id	3.5V @ 5mA
Drain to Source Voltage (Vdss)	1200 V
Series	Automotive, AEC-Q101
Power Dissipation (Max)	235W (Tc)
Package / Case	TO-247-4
Technology	SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Mfr	Diodes Incorporated
Vgs (Max)	+19V, -8V
Drive Voltage (Max Rds On, Min Rds On)	15V
Package	Tube