DMWS120H100SM4
detaildesc

DMWS120H100SM4

Diodes Incorporated

Product No:

DMWS120H100SM4

Manufacturer:

Diodes Incorporated

Package:

TO-247-4

Batch:

-

Datasheet:

pdf

Description:

SIC MOSFET BVDSS: >1000V TO247-4

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 4

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $19.1995

    $19.1995

  • 10

    $16.91095

    $169.1095

  • 100

    $14.62601

    $1462.601

  • 500

    $13.254818

    $6627.409

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1516 pF @ 1000 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 15 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 15V
Supplier Device Package TO-247-4
Vgs(th) (Max) @ Id 3.5V @ 5mA
Drain to Source Voltage (Vdss) 1200 V
Series -
Power Dissipation (Max) 208W (Tc)
Package / Case TO-247-4
Technology SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C 37.2A (Tc)
Mfr Diodes Incorporated
Vgs (Max) +19V, -8V
Drive Voltage (Max Rds On, Min Rds On) 15V
Package Tube
Base Product Number DMWS120