DMT10H009LH3
detaildesc

DMT10H009LH3

Diodes Incorporated

Product No:

DMT10H009LH3

Manufacturer:

Diodes Incorporated

Package:

TO-251

Batch:

-

Datasheet:

pdf

Description:

MOSFET N-CH 100V 84A TO251

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2309 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 20.2 nC @ 4.5 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 9mOhm @ 20A, 10V
Supplier Device Package TO-251
Vgs(th) (Max) @ Id 2.5V @ 250µA
Drain to Source Voltage (Vdss) 100 V
Series -
Power Dissipation (Max) 96W (Tc)
Package / Case TO-251-3 Stub Leads, IPak
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 84A (Tc)
Mfr Diodes Incorporated
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tube
Base Product Number DMT10