CWDM3011P TR13 PBFREE

Central Semiconductor Corp

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8-SOIC

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MOSFET P-CH 30V 11A 8SOIC

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3100 pF @ 8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	20mOhm @ 11A, 10V
Supplier Device Package	8-SOIC
Vgs(th) (Max) @ Id	3V @ 250µA
Drain to Source Voltage (Vdss)	30 V
Series	-
Power Dissipation (Max)	2.5W (Ta)
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	11A (Ta)
Mfr	Central Semiconductor Corp
Vgs (Max)	20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	CWDM3011