CUHS20S30,H3F

Toshiba Semiconductor and Storage

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CUHS20S30,H3F

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Package:

US2H

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Description:

DIODE SCHOTTKY 30V 2A US2H

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Speed	Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F	390pF @ 0V, 1MHz
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	US2H
Current - Reverse Leakage @ Vr	500 µA @ 30 V
Series	-
Package / Case	2-SMD, Flat Lead
Technology	Schottky
Voltage - Forward (Vf) (Max) @ If	410 mV @ 2 A
Mfr	Toshiba Semiconductor and Storage
Voltage - DC Reverse (Vr) (Max)	30 V
Package	Tape & Reel (TR)
Current - Average Rectified (Io)	2A
Operating Temperature - Junction	150°C (Max)
Base Product Number	CUHS20