CSD19531KCS

Texas Instruments

Product No:

CSD19531KCS

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Package:

TO-220-3

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Description:

MOSFET N-CH 100V 100A TO220-3

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3870 pF @ 50 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	7.7mOhm @ 60A, 10V
Supplier Device Package	TO-220-3
Vgs(th) (Max) @ Id	3.3V @ 250µA
Drain to Source Voltage (Vdss)	100 V
Series	NexFET™
Power Dissipation (Max)	214W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	100A (Ta)
Mfr	Texas Instruments
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tube
Base Product Number	CSD19531