BUK9Y113-100E,115
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BUK9Y113-100E,115

NXP USA Inc.

Product No:

BUK9Y113-100E,115

Manufacturer:

NXP USA Inc.

Package:

LFPAK56, Power-SO8

Batch:

-

Datasheet:

pdf

Description:

TRANSISTOR >30MHZ

Quantity:

Delivery:

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Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 870 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 8.4 nC @ 5 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 110mOhm @ 5A, 10V
Supplier Device Package LFPAK56, Power-SO8
Vgs(th) (Max) @ Id 2.1V @ 1mA
Drain to Source Voltage (Vdss) 100 V
Series Automotive, AEC-Q101, TrenchMOS™
Power Dissipation (Max) 45W (Tc)
Package / Case SC-100, SOT-669
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Mfr NXP USA Inc.
Vgs (Max) ±10V
Drive Voltage (Max Rds On, Min Rds On) 5V
Package Bulk