BUK755R4-100E127
detaildesc

BUK755R4-100E127

Philips

Product No:

BUK755R4-100E127

Manufacturer:

Philips

Package:

TO-220AB

Batch:

-

Datasheet:

pdf

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 11810 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 5.2mOhm @ 25A, 10V
Supplier Device Package TO-220AB
Vgs(th) (Max) @ Id 4V @ 1mA
Drain to Source Voltage (Vdss) 100 V
Series Automotive, AEC-Q101, TrenchMOS™
Power Dissipation (Max) 349W (Tc)
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Mfr Philips
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk

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