BSS123W RFG

Taiwan Semiconductor Corporation

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BSS123W RFG

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Package:

SOT-323

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Description:

100V, 0.16A, SINGLE N-CHANNEL PO

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	30 pF @ 50 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	5Ohm @ 160mA, 10V
Supplier Device Package	SOT-323
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	100 V
Series	-
Power Dissipation (Max)	298mW (Ta)
Package / Case	SC-70, SOT-323
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	160mA (Ta)
Mfr	Taiwan Semiconductor Corporation
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)