APTC80DA15T1G
detaildesc

APTC80DA15T1G

Microsemi Corporation

Product No:

APTC80DA15T1G

Manufacturer:

Microsemi Corporation

Package:

SP1

Batch:

-

Datasheet:

pdf

Description:

MOSFET N-CH 800V 28A SP1

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4507 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V
Mounting Type Chassis Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 150mOhm @ 14A, 10V
Supplier Device Package SP1
Vgs(th) (Max) @ Id 3.9V @ 2mA
Drain to Source Voltage (Vdss) 800 V
Series -
Power Dissipation (Max) 277W (Tc)
Package / Case SP1
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Mfr Microsemi Corporation
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk