1N8031-GA
GeneSiC Semiconductor
Product No:
1N8031-GA
Manufacturer:
Package:
TO-276
Batch:
-
Datasheet:
Description:
DIODE SIL CARBIDE 650V 1A TO276
Quantity:
Delivery:
Payment:
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Product Information
Parameter Info
User Guide
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Capacitance @ Vr, F | 76pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Supplier Device Package | TO-276 |
| Current - Reverse Leakage @ Vr | 5 µA @ 650 V |
| Series | - |
| Package / Case | TO-276AA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 1 A |
| Mfr | GeneSiC Semiconductor |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Package | Tube |
| Current - Average Rectified (Io) | 1A |
| Operating Temperature - Junction | -55°C ~ 250°C |
| Base Product Number | 1N8031 |
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