TW083N65C,S1F

Toshiba Semiconductor and Storage

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TW083N65C,S1F

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Package:

TO-247

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Description:

G3 650V SIC-MOSFET TO-247 83MOH

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Operating Temperature	175°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	873 pF @ 400 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 18 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	113mOhm @ 15A, 18V
Supplier Device Package	TO-247
Vgs(th) (Max) @ Id	5V @ 600µA
Drain to Source Voltage (Vdss)	650 V
Series	-
Power Dissipation (Max)	111W (Tc)
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	+25V, -10V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tube