TW070J120B,S1Q

Toshiba Semiconductor and Storage

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TW070J120B,S1Q

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TO-3P(N)

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Description:

SICFET N-CH 1200V 36A TO3P

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Operating Temperature	-55°C ~ 175°C
FET Feature	Standard
Input Capacitance (Ciss) (Max) @ Vds	1680 pF @ 800 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	67 nC @ 20 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	90mOhm @ 18A, 20V
Supplier Device Package	TO-3P(N)
Vgs(th) (Max) @ Id	5.8V @ 20mA
Drain to Source Voltage (Vdss)	1200 V
Series	-
Power Dissipation (Max)	272W (Tc)
Package / Case	TO-3P-3, SC-65-3
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±25V, -10V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tube
Base Product Number	TW070J120