TSM900N06CW RPG

Taiwan Semiconductor Corporation

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TSM900N06CW RPG

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Package:

SOT-223

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Description:

MOSFET N-CHANNEL 60V 11A SOT223

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	500 pF @ 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.3 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	90mOhm @ 6A, 10V
Supplier Device Package	SOT-223
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	60 V
Series	-
Power Dissipation (Max)	4.17W (Tc)
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Mfr	Taiwan Semiconductor Corporation
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	TSM900