TSM60NB190CF C0G

Taiwan Semiconductor Corporation

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TSM60NB190CF C0G

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ITO-220S

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Description:

MOSFET N-CH 600V 18A ITO220S

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1311 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	190mOhm @ 3.7A, 10V
Supplier Device Package	ITO-220S
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	600 V
Series	-
Power Dissipation (Max)	59.5W (Tc)
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Mfr	Taiwan Semiconductor Corporation
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TSM60