Home / FET, MOSFET Arrays / TSM110NB04DCR RLG
TSM110NB04DCR RLG
detaildesc

TSM110NB04DCR RLG

Taiwan Semiconductor Corporation

Product No:

TSM110NB04DCR RLG

Package:

8-PDFN (5x6)

Batch:

-

Datasheet:

pdf

Description:

DUAL N-CHANNEL POWER MOSFET 40V,

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 15002

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.375

    $2.375

  • 10

    $1.97315

    $19.7315

  • 100

    $1.57016

    $157.016

  • 500

    $1.328594

    $664.297

  • 1000

    $1.127298

    $1127.298

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 155°C (TJ)
FET Feature -
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 1506pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 11mOhm @ 10A, 10V
Supplier Device Package 8-PDFN (5x6)
Vgs(th) (Max) @ Id 4V @ 250µA
Drain to Source Voltage (Vdss) 40V
Series -
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Power - Max 2W (Ta), 48W (Tc)
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 48A (Tc)
Mfr Taiwan Semiconductor Corporation
Package Tape & Reel (TR)
Base Product Number TSM110