TSM056NH04LCV RGG

Taiwan Semiconductor Corporation

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TSM056NH04LCV RGG

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Package:

8-PDFN (3.1x3.1)

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Description:

40V, 54A, SINGLE N-CHANNEL POWER

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2076 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	5.6mOhm @ 27A, 10V
Supplier Device Package	8-PDFN (3.1x3.1)
Vgs(th) (Max) @ Id	2.2V @ 250µA
Drain to Source Voltage (Vdss)	40 V
Series	PerFET™
Power Dissipation (Max)	34W (Tc)
Package / Case	8-PowerWDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	16A (Ta), 54A (Tc)
Mfr	Taiwan Semiconductor Corporation
Vgs (Max)	±16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)