TRS12E65H,S1Q
Toshiba Semiconductor and Storage
Product No:
TRS12E65H,S1Q
Manufacturer:
Package:
TO-220-2L
Batch:
-
Datasheet:
-
Description:
G3 SIC-SBD 650V 12A TO-220-2L
Quantity:
Delivery:
Payment:
In Stock : 400
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$3.1065
$3.1065
10
$2.6049
$26.049
100
$2.1071
$210.71
500
$1.872944
$936.472
1000
$1.603704
$1603.704
2000
$1.510063
$3020.126
5000
$1.44875
$7243.75
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Product Information
Parameter Info
User Guide
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Capacitance @ Vr, F | 778pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Product Status | Active |
| Supplier Device Package | TO-220-2L |
| Current - Reverse Leakage @ Vr | 120 µA @ 650 V |
| Series | - |
| Package / Case | TO-220-2 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 12 A |
| Mfr | Toshiba Semiconductor and Storage |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Package | Tube |
| Current - Average Rectified (Io) | 12A |
| Operating Temperature - Junction | 175°C |
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2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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