TPN4R712MD,L1Q

Toshiba Semiconductor and Storage

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TPN4R712MD,L1Q

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Package:

8-TSON Advance (3.1x3.1)

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Description:

MOSFET P-CH 20V 36A 8TSON

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	4300 pF @ 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	65 nC @ 5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	4.7mOhm @ 18A, 4.5V
Supplier Device Package	8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id	1.2V @ 1mA
Drain to Source Voltage (Vdss)	20 V
Series	U-MOSVI
Power Dissipation (Max)	42W (Tc)
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	TPN4R712