TPN2R203NC,L1Q

Toshiba Semiconductor and Storage

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TPN2R203NC,L1Q

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Package:

8-TSON Advance (3.1x3.1)

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Description:

MOSFET N-CH 30V 45A 8TSON

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2230 pF @ 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	2.2mOhm @ 22.5A, 10V
Supplier Device Package	8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id	2.3V @ 500µA
Drain to Source Voltage (Vdss)	30 V
Series	U-MOSVIII
Power Dissipation (Max)	700mW (Ta), 42W (Tc)
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	45A (Tc)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	TPN2R203