TPH1R712MD,L1Q

Toshiba Semiconductor and Storage

Product No:

TPH1R712MD,L1Q

Manufacturer:

Package:

8-SOP Advance (5x5)

Batch:

Datasheet:

Description:

MOSFET P-CH 20V 60A 8SOP

Quantity:

Delivery:

Payment:

In Stock : 6888

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	10900 pF @ 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	182 nC @ 5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	1.7mOhm @ 30A, 4.5V
Supplier Device Package	8-SOP Advance (5x5)
Vgs(th) (Max) @ Id	1.2V @ 1mA
Drain to Source Voltage (Vdss)	20 V
Series	U-MOSVI
Power Dissipation (Max)	78W (Tc)
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	TPH1R712