TPCP8011,LF

Toshiba Semiconductor and Storage

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TPCP8011,LF

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Package:

PS-8

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Description:

PB-F POWER MOSFET TRANSISTOR PS-

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Operating Temperature	175°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	505 pF @ 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11.8 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	51.2mOhm @ 2.5A, 10V
Supplier Device Package	PS-8
Vgs(th) (Max) @ Id	3V @ 1mA
Drain to Source Voltage (Vdss)	40 V
Series	Automotive, AEC-Q101
Power Dissipation (Max)	940mW (Ta)
Package / Case	8-SMD, Flat Lead
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	5A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)