TPC8132,LQ(S

Toshiba Semiconductor and Storage

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TPC8132,LQ(S

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Package:

8-SOP

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Description:

MOSFET P-CH 40V 7A 8SOP

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1580 pF @ 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	25mOhm @ 3.5A, 10V
Supplier Device Package	8-SOP
Vgs(th) (Max) @ Id	2V @ 200µA
Drain to Source Voltage (Vdss)	40 V
Series	U-MOSVI
Power Dissipation (Max)	1W (Ta)
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	7A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	+20V, -25V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	TPC8132