TK8P60W,RVQ
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TK8P60W,RVQ

Toshiba Semiconductor and Storage

Product No:

TK8P60W,RVQ

Package:

DPAK

Batch:

-

Datasheet:

-

Description:

MOSFET N CH 600V 8A DPAK

Quantity:

Delivery:

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Payment:

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 300 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 18.5 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 500mOhm @ 4A, 10V
Supplier Device Package DPAK
Vgs(th) (Max) @ Id 3.7V @ 400µA
Drain to Source Voltage (Vdss) 600 V
Series DTMOSIV
Power Dissipation (Max) 80W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 8A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number TK8P60