TK560A65Y,S4X

Toshiba Semiconductor and Storage

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TK560A65Y,S4X

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Package:

TO-220SIS

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Description:

MOSFET N-CH 650V 7A TO220SIS

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	380 pF @ 300 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14.5 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	560mOhm @ 3.5A, 10V
Supplier Device Package	TO-220SIS
Vgs(th) (Max) @ Id	4V @ 240µA
Drain to Source Voltage (Vdss)	650 V
Series	DTMOSV
Power Dissipation (Max)	30W
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK560A65