TK4R4P06PL,RQ
detaildesc

TK4R4P06PL,RQ

Toshiba Semiconductor and Storage

Product No:

TK4R4P06PL,RQ

Package:

DPAK

Batch:

-

Datasheet:

-

Description:

MOSFET N-CHANNEL 60V 58A DPAK

Quantity:

Delivery:

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Payment:

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In Stock : 1752

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.3205

    $1.3205

  • 10

    $1.083

    $10.83

  • 100

    $0.84227

    $84.227

  • 500

    $0.713906

    $356.953

  • 1000

    $0.581552

    $581.552

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Product Information

Parameter Info

User Guide

Operating Temperature 175°C
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3280 pF @ 30 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 48.2 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 4.4mOhm @ 29A, 10V
Supplier Device Package DPAK
Vgs(th) (Max) @ Id 2.5V @ 500µA
Drain to Source Voltage (Vdss) 60 V
Series U-MOSIX-H
Power Dissipation (Max) 87W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 58A (Tc)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number TK4R4P06