TK46E08N1,S1X

Toshiba Semiconductor and Storage

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TK46E08N1,S1X

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Package:

TO-220

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Description:

MOSFET N-CH 80V 80A TO220

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2500 pF @ 40 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	37 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	8.4mOhm @ 23A, 10V
Supplier Device Package	TO-220
Vgs(th) (Max) @ Id	4V @ 500µA
Drain to Source Voltage (Vdss)	80 V
Series	U-MOSVIII-H
Power Dissipation (Max)	103W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK46E08