TK3P80E,RQ

Toshiba Semiconductor and Storage

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TK3P80E,RQ

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Package:

DPAK

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Description:

PB-F POWER MOSFET TRANSISTOR DPA

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In Stock : 2000

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Operating Temperature	150°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	500 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	4.9Ohm @ 1.5A, 10V
Supplier Device Package	DPAK
Vgs(th) (Max) @ Id	4V @ 300µA
Drain to Source Voltage (Vdss)	800 V
Series	-
Power Dissipation (Max)	80W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)