TK31V60W,LVQ

Toshiba Semiconductor and Storage

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TK31V60W,LVQ

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Package:

4-DFN-EP (8x8)

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Description:

MOSFET N-CH 600V 30.8A 4DFN

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In Stock : 2500

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3000 pF @ 300 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	86 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	98mOhm @ 15.4A, 10V
Supplier Device Package	4-DFN-EP (8x8)
Vgs(th) (Max) @ Id	3.7V @ 1.5mA
Drain to Source Voltage (Vdss)	600 V
Series	DTMOSIV
Power Dissipation (Max)	240W (Tc)
Package / Case	4-VSFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	30.8A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	TK31V60