TK2R4A08QM,S4X

Toshiba Semiconductor and Storage

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TK2R4A08QM,S4X

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Package:

TO-220SIS

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Description:

UMOS10 TO-220SIS 80V 2.4MOHM

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Operating Temperature	175°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	13000 pF @ 40 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	179 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	2.44mOhm @ 50A, 10V
Supplier Device Package	TO-220SIS
Vgs(th) (Max) @ Id	3.5V @ 2.2mA
Drain to Source Voltage (Vdss)	80 V
Series	U-MOSX-H
Power Dissipation (Max)	47W (Tc)
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tube