TK2Q60D(Q)

Toshiba Semiconductor and Storage

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TK2Q60D(Q)

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Package:

PW-MOLD2

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Description:

MOSFET N-CH 600V 2A PW-MOLD2

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	280 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	4.3Ohm @ 1A, 10V
Supplier Device Package	PW-MOLD2
Vgs(th) (Max) @ Id	4.4V @ 1mA
Drain to Source Voltage (Vdss)	600 V
Series	π-MOSVII
Power Dissipation (Max)	60W (Tc)
Package / Case	TO-251-3 Stub Leads, IPak
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk
Base Product Number	TK2Q60