TK1K7A60F,S4X

Toshiba Semiconductor and Storage

Product No:

TK1K7A60F,S4X

Manufacturer:

Package:

TO-220SIS

Batch:

Datasheet:

Description:

X35 PB-F POWER MOSFET TRANSISTOR

Quantity:

Delivery:

Payment:

In Stock : 1

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	150°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	560 pF @ 300 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	1.7Ohm @ 2A, 10V
Supplier Device Package	TO-220SIS
Vgs(th) (Max) @ Id	4V @ 460µA
Drain to Source Voltage (Vdss)	600 V
Series	-
Power Dissipation (Max)	35W (Tc)
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK1K7A60