TK19A50W,S5X
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TK19A50W,S5X

Toshiba Semiconductor and Storage

Product No:

TK19A50W,S5X

Package:

TO-220SIS

Batch:

-

Datasheet:

-

Description:

PB-F POWER MOSFET TRANSISTOR TO-

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 300 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 190mOhm @ 7.9A, 10V
Supplier Device Package TO-220SIS
Vgs(th) (Max) @ Id 3.7V @ 790µA
Drain to Source Voltage (Vdss) 500 V
Series DTMOSIV
Power Dissipation (Max) 40W (Tc)
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 18.5A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube