TK17V65W,LQ
detaildesc

TK17V65W,LQ

Toshiba Semiconductor and Storage

Product No:

TK17V65W,LQ

Package:

4-DFN-EP (8x8)

Batch:

-

Datasheet:

-

Description:

X35 PB-F POWER MOSFET TRANSISTOR

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 15

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.135

    $3.135

  • 10

    $2.63055

    $26.3055

  • 100

    $2.12781

    $212.781

  • 500

    $1.891374

    $945.687

  • 1000

    $1.619484

    $1619.484

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 300 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 210mOhm @ 8.7A, 10V
Supplier Device Package 4-DFN-EP (8x8)
Vgs(th) (Max) @ Id 3.5V @ 900µA
Drain to Source Voltage (Vdss) 650 V
Series -
Power Dissipation (Max) 156W (Tc)
Package / Case 4-VSFN Exposed Pad
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 17.3A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number TK17V65