SSM6K809R,LF

Toshiba Semiconductor and Storage

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SSM6K809R,LF

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Package:

6-TSOP-F

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Description:

SMALL SIGNAL MOSFET N-CH VDSS=60

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Operating Temperature	175°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	550 pF @ 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.3 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	36mOhm @ 5A, 10V
Supplier Device Package	6-TSOP-F
Vgs(th) (Max) @ Id	2.5V @ 100µA
Drain to Source Voltage (Vdss)	60 V
Series	U-MOSVIII-H
Power Dissipation (Max)	1.5W (Ta)
Package / Case	6-SMD, Flat Leads
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	6A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Tape & Reel (TR)
Base Product Number	SSM6K809