SSM6J511NU,LF

Toshiba Semiconductor and Storage

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SSM6J511NU,LF

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6-UDFNB (2x2)

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Description:

MOSFET P-CH 12V 14A 6UDFNB

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3350 pF @ 6 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	47 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	9.1mOhm @ 4A, 8V
Supplier Device Package	6-UDFNB (2x2)
Vgs(th) (Max) @ Id	1V @ 1mA
Drain to Source Voltage (Vdss)	12 V
Series	U-MOSVII
Package / Case	6-WDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	14A (Ta)
Mfr	Toshiba Semiconductor and Storage
Package	Tape & Reel (TR)
Base Product Number	SSM6J511