RN1909(T5L,F,T)

Toshiba Semiconductor and Storage

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RN1909(T5L,F,T)

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US6

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Description:

TRANS 2NPN PREBIAS 0.2W US6

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Frequency - Transition	250MHz
Current - Collector (Ic) (Max)	100mA
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Resistor - Base (R1)	47kOhms
Mounting Type	Surface Mount
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	50V
Supplier Device Package	US6
Series	-
Transistor Type	2 NPN - Pre-Biased (Dual)
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max	200mW
Mfr	Toshiba Semiconductor and Storage
Resistor - Emitter Base (R2)	22kOhms
Current - Collector Cutoff (Max)	100nA (ICBO)
Package	Tape & Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 10mA, 5V
Base Product Number	RN1909