RN1710JE(TE85L,F)
Toshiba Semiconductor and Storage
Product No:
RN1710JE(TE85L,F)
Manufacturer:
Package:
ESV
Batch:
-
Datasheet:
-
Description:
NPN X 2 BRT Q1BSR=4.7KOHM Q1BER=
Quantity:
Delivery:
Payment:
In Stock : 3863
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.3705
$0.3705
10
$0.2603
$2.603
100
$0.13129
$13.129
500
$0.107084
$53.542
1000
$0.079448
$79.448
2000
$0.066842
$133.684
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| Frequency - Transition | 250MHz |
| Current - Collector (Ic) (Max) | 100mA |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Resistor - Base (R1) | 4.7kOhms |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Supplier Device Package | ESV |
| Series | - |
| Transistor Type | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) |
| Package / Case | SOT-553 |
| Power - Max | 100mW |
| Mfr | Toshiba Semiconductor and Storage |
| Resistor - Emitter Base (R2) | - |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Package | Tape & Reel (TR) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Base Product Number | RN1710 |
Recommended Parts
RN1710JE(TE85L,F) Related Blog
Purchase must see! Electronic component selection from entry to give up
2024-10-24 27
Basic knowledge of crystal vibration, circuit design, non-vibration reasons, circuit principle, crystal frequency, digital circuit application (crystal vibration data download)
2024-04-08 87
Order transfer! A 30-year old Hong Kong-owned PCB factory in Shenzhen was sold
2024-02-22 33
New product release | Daoheshun infrared methane sensor, guarding the "last pass" of gas safety
2024-02-22 20
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
CopyRight © 道合顺 2013 - 2022 粤ICP备18104022号 粤公网安备 44030402004525号