RBA250N04AHPF-4UA01#GB0

Renesas Electronics Corporation

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TO-263-7

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Description:

POWER TRS2 AUTOMOTIVE MOS MP-25L

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Operating Temperature	175°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	19350 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	368 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	0.85mOhm @ 125A, 10V
Supplier Device Package	TO-263-7
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	40 V
Series	Automotive, AEC-Q101
Power Dissipation (Max)	1.8W (Ta), 348W (Tc)
Package / Case	TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	250A (Tc)
Mfr	Renesas Electronics America Inc
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)