NVH4L015N065SC1
detaildesc

NVH4L015N065SC1

onsemi

Product No:

NVH4L015N065SC1

Manufacturer:

onsemi

Package:

TO-247-4L

Batch:

-

Datasheet:

pdf

Description:

SIC MOS TO247-4L 650V

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 450

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $61.275

    $61.275

  • 10

    $55.7023

    $557.023

  • 30

    $53.845686

    $1615.37058

  • 90

    $50.132346

    $4511.91114

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4790 pF @ 325 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 283 nC @ 18 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 18mOhm @ 75A, 18V
Supplier Device Package TO-247-4L
Vgs(th) (Max) @ Id 4.3V @ 25mA
Drain to Source Voltage (Vdss) 650 V
Series Automotive, AEC-Q101
Power Dissipation (Max) 500W (Tc)
Package / Case TO-247-4
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 142A (Tc)
Mfr onsemi
Vgs (Max) +22V, -8V
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Package Tray