Home / Single FETs, MOSFETs / NVD6416ANLT4G-001-VF01
NVD6416ANLT4G-001-VF01
detaildesc

NVD6416ANLT4G-001-VF01

onsemi

Product No:

NVD6416ANLT4G-001-VF01

Manufacturer:

onsemi

Package:

DPAK-3

Batch:

-

Datasheet:

pdf

Description:

NVD6416 - N-CHANNEL POWER MOSFET

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 74mOhm @ 19A, 10V
Supplier Device Package DPAK-3
Vgs(th) (Max) @ Id 2.2V @ 250µA
Drain to Source Voltage (Vdss) 100 V
Series Automotive, AEC-Q101
Power Dissipation (Max) 71W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Mfr onsemi
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk