NTTFS1D2N02P1E

onsemi

Product No:

NTTFS1D2N02P1E

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Package:

8-PQFN (3.3x3.3)

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Description:

MOSFET N-CH 25V 23A/180A 8PQFN

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	4040 pF @ 13 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	1mOhm @ 38A, 10V
Supplier Device Package	8-PQFN (3.3x3.3)
Vgs(th) (Max) @ Id	2V @ 934µA
Drain to Source Voltage (Vdss)	25 V
Series	-
Power Dissipation (Max)	820mW (Ta), 52W (Tc)
Package / Case	8-PowerWDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	23A (Ta), 180A (Tc)
Mfr	onsemi
Vgs (Max)	+16V, -12V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	NTTFS1