NTMTSC4D2N10GTXG
detaildesc

NTMTSC4D2N10GTXG

onsemi

Product No:

NTMTSC4D2N10GTXG

Manufacturer:

onsemi

Package:

8-TDFNW (8.3x8.4)

Batch:

-

Datasheet:

pdf

Description:

100V MVSOA IN DFNW8(PQFN8X8) PAC

Quantity:

Delivery:

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Payment:

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In Stock : 2935

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $6.0135

    $6.0135

  • 10

    $5.0464

    $50.464

  • 100

    $4.08291

    $408.291

  • 500

    $3.629209

    $1814.6045

  • 1000

    $3.107516

    $3107.516

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 10450 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 159 nC @ 10 V
Mounting Type Surface Mount, Wettable Flank
Product Status Active
Rds On (Max) @ Id, Vgs 4.2mOhm @ 88A, 10V
Supplier Device Package 8-TDFNW (8.3x8.4)
Vgs(th) (Max) @ Id 4V @ 450µA
Drain to Source Voltage (Vdss) 100 V
Series -
Power Dissipation (Max) 3.9W (Ta), 267W (Tc)
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 21A (Ta), 178A (Tc)
Mfr onsemi
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)