NTMS10P02R2G

onsemi

Product No:

NTMS10P02R2G

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Package:

8-SOIC

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Description:

MOSFET P-CH 20V 8.8A 8SOIC

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3640 pF @ 16 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	70 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	14mOhm @ 10A, 4.5V
Supplier Device Package	8-SOIC
Vgs(th) (Max) @ Id	1.2V @ 250µA
Drain to Source Voltage (Vdss)	20 V
Series	-
Power Dissipation (Max)	1.6W (Ta)
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	8.8A (Ta)
Mfr	onsemi
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	NTMS10