NTHS5441T1G

onsemi

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NTHS5441T1G

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ChipFET™

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Description:

MOSFET P-CH 20V 3.9A CHIPFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	710 pF @ 5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	46mOhm @ 3.9A, 4.5V
Supplier Device Package	ChipFET™
Vgs(th) (Max) @ Id	1.2V @ 250µA
Drain to Source Voltage (Vdss)	20 V
Series	-
Power Dissipation (Max)	1.3W (Ta)
Package / Case	8-SMD, Flat Lead
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3.9A (Ta)
Mfr	onsemi
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	NTHS5441