NP82N10PUF-E1-AY
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NP82N10PUF-E1-AY

Renesas

Product No:

NP82N10PUF-E1-AY

Manufacturer:

Renesas

Package:

TO-263-3

Batch:

-

Datasheet:

-

Description:

NP82N10PUF-E1-AY - MOS FIELD EFF

Quantity:

Delivery:

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In Stock : 6400

Minimum: 1 Multiples: 1

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Unit Price

Ext Price

  • 121

    $2.3655

    $286.2255

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Product Information

Parameter Info

User Guide

Operating Temperature 175°C
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4350 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 96 nC @ 10 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 15mOhm @ 41A, 10V
Supplier Device Package TO-263-3
Vgs(th) (Max) @ Id 3.3V @ 250µA
Drain to Source Voltage (Vdss) 100 V
Series -
Power Dissipation (Max) 1.8W (Ta), 150W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 82A (Tc)
Mfr Renesas
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 5.8V, 10V
Package Bulk