NP82N04NDG-S18-AY
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NP82N04NDG-S18-AY

Renesas Electronics Corporation

Product No:

NP82N04NDG-S18-AY

Package:

TO-262-3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 40V 82A TO262-3

Quantity:

Delivery:

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Payment:

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Product Information

Parameter Info

User Guide

Operating Temperature 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 9 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V
Mounting Type Through Hole
Product Status Obsolete
Rds On (Max) @ Id, Vgs 4.2mOhm @ 41A, 10V
Supplier Device Package TO-262-3
Vgs(th) (Max) @ Id 2.5V @ 250µA
Drain to Source Voltage (Vdss) 40 V
Series -
Power Dissipation (Max) 1.8W (Ta), 143W (Tc)
Package / Case TO-262-3 Full Pack, I²Pak
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 82A (Tc)
Mfr Renesas Electronics America Inc
Package Tube